Phase Transition Based Resistive Random-Access Memory

    • Application Type:
      Continuation
      Country:
      United States
      Status:
      Filed on 25-Aug-2020, Published by Patent Office
      Organization:
      Purdue University
      SRC Filing ID:
      P1945

    Inventors

    • Joerg Appenzeller (Purdue)
    • Feng Zhang (Purdue)

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