Atomic Layer Deposited (ALD) Oxide Semiconductors for Integrated Circuits (ICS)

    • Application Type:
      Utility
      Country:
      United States
      Status:
      Filed on 8-Dec-2021, Published by Patent Office
      Organization:
      Purdue University
      SRC Filing ID:
      P2000

    Inventors

    • Peide Ye (Purdue)
    • Mengwei Si (Purdue)

    Related Patents

    P1983
    Application Expired
    nCORE

    Duplicate of P2000

    Mengwei Si (Purdue); Peide Ye (Purdue)
    Patent Application Expired
    Application Type: Provisional

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