[x]
Content Type
Patent Filings
|
| 1 through 17 of
17 similar documents, best matches first. |
|
- 1:
Solventless, Resistless, Direct Dielectric Patterning (Patent...
- Solventless, Resistless, Direct Dielectric Patterning Application Type: Foreign National Patent Number: 171285 Country: Taiwan Status: Filed on 9-Jan-2001, Issued on 2-Jun-2003, ...
URL: https://www.src.org/library/patent/p0207/
Modified: 2003-06-02 - 22KB
Find Similar Documents
- 2:
Solventless, Resistless, Direct Dielectric Patterning (Patent...
- Solventless, Resistless, Direct Dielectric Patterning Application Type: European Patent Office Patent Number: 1269259 Status: Filed on 11-Jan-2001, Issued on 8-Aug-2012, Patent ...
URL: https://www.src.org/library/patent/p0308/
Modified: 2012-08-08 - 22KB
Find Similar Documents
- 3:
Method for Patterning a Radiation Sensitive Layer (Patent P0087...
- Method for Patterning a Radiation Sensitive Layer Application Type: Utility Patent Number: 6509138 Country: United States Status: Filed on 12-Jan-2000, Issued on 21-Jan-2003 ...
URL: https://www.src.org/library/patent/p0087/
Modified: 2003-01-21 - 22KB
Find Similar Documents
- 4:
Electrical Device Including Dielectric Layer Formed By Direct...
- Electrical Device Including Dielectric Layer Formed By Direct Patterning Process Application Type: Divisional Patent Number: 6946736 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0327/
Modified: 2005-09-20 - 22KB
Find Similar Documents
- 5:
Enhanced Stripping of Implanted Resists (Patent P1259) - SRC
- Enhanced Stripping of Implanted Resists Application Type: Utility Patent Number: 8772170 Country: United States Status: Filed on 29-Dec-2010, Issued on 8-Jul-2014, Patent Abandoned ...
URL: https://www.src.org/library/patent/p1259/
Modified: 2014-07-08 - 25KB
Find Similar Documents
- 6:
Direct Chemical Vapor Deposition of Graphene on Dielectric Sufraces...
- Direct Chemical Vapor Deposition of Graphene on Dielectric Sufraces Application Type: Utility Patent Number: 8709881 Country: United States Status: Filed on 2-May-2011, Issued on ...
URL: https://www.src.org/library/patent/p1273/
Modified: 2014-04-29 - 22KB
Find Similar Documents
- 7:
Semiconductor Devices Having an Interfacial Dielectric Layer...
- Semiconductor Devices Having an Interfacial Dielectric Layer and Related Methods Application Type: Utility Patent Number: 7507629 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0450/
Modified: 2009-03-24 - 23KB
Find Similar Documents
- 8:
High Capacitance Density Gate Dielectrics for III-V Semiconductor...
- High Capacitance Density Gate Dielectrics for III-V Semiconductor Channels Using a Pre-Disposition Surface Treatment Involving Plasma and Ti Precursor Exposure Application Type: ...
URL: https://www.src.org/library/patent/p1506/
Modified: 2015-11-17 - 22KB
Find Similar Documents
- 9:
Establishing a Uniformly Thin Dielectric Layer on Graphene in...
- Establishing a Uniformly Thin Dielectric Layer on Graphene in a Semiconductor Device without Affecting the Properties of Graphene Application Type: Utility Patent Number: 8198707 ...
URL: https://www.src.org/library/patent/p1099/
Modified: 2012-06-12 - 21KB
Find Similar Documents
- 10:
Single-Mask Double-Patterning Lithography (Patent P1185) - SRC
- Single-Mask Double-Patterning Lithography Application Type: Utility Patent Number: 8415089 Country: United States Status: Filed on 15-Mar-2010, Issued on 9-Apr-2013, Patent ...
URL: https://www.src.org/library/patent/p1185/
Modified: 2013-04-09 - 22KB
Find Similar Documents
- 11:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
Find Similar Documents
- 12:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
Find Similar Documents
- 13:
Low-Power, P-Channel Enhancement-Type Metal-Oxide Semiconductor...
- Low-Power, P-Channel Enhancement-Type Metal-Oxide Semiconductor Field-Effect Transistor (PMOSFET) SRAM Cells Application Type: Utility Patent Number: 7286389 Country: United States ...
URL: https://www.src.org/library/patent/p0579/
Modified: 2007-10-23 - 24KB
Find Similar Documents
- 14:
Spin Transistor Having Multiferroic Gate Dielectric (Patent P1282...
- Spin Transistor Having Multiferroic Gate Dielectric Application Type: Utility Patent Number: 8860006 Country: United States Status: Filed on 25-Mar-2011, Issued on 14-Oct-2014, ...
URL: https://www.src.org/library/patent/p1282/
Modified: 2014-10-14 - 23KB
Find Similar Documents
- 15:
Patterning Electronic Devices using Reactive-Ion Etching of Tin...
- Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
Find Similar Documents
- 16:
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
- Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB
Find Similar Documents
- 17:
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
- Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
Find Similar Documents
| 1 through 17 of
17 similar documents, best matches first. |
|
|
|
