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GRC Science Area
MPS – Material & Process Sciences
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1 through 26 of
26 similar documents, best matches first. |
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- 1:
Semiconductor Research Corporation - SRC
- GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB Find Similar Documents
- 2:
Solventless, Resistless, Direct Dielectric Patterning (Patent...
- Solventless, Resistless, Direct Dielectric Patterning Application Type: Foreign National Patent Number: 171285 Country: Taiwan Status: Filed on 9-Jan-2001, Issued on 2-Jun-2003, ...
URL: https://www.src.org/library/patent/p0207/
Modified: 2003-06-02 - 22KB Find Similar Documents
- 3:
Solventless, Resistless, Direct Dielectric Patterning (Patent...
- Solventless, Resistless, Direct Dielectric Patterning Application Type: European Patent Office Patent Number: 1269259 Status: Filed on 11-Jan-2001, Issued on 8-Aug-2012, Patent ...
URL: https://www.src.org/library/patent/p0308/
Modified: 2012-08-08 - 22KB Find Similar Documents
- 4:
Method for Patterning a Radiation Sensitive Layer (Patent P0087...
- Method for Patterning a Radiation Sensitive Layer Application Type: Utility Patent Number: 6509138 Country: United States Status: Filed on 12-Jan-2000, Issued on 21-Jan-2003 ...
URL: https://www.src.org/library/patent/p0087/
Modified: 2003-01-21 - 22KB Find Similar Documents
- 5:
Non-Crystalline Oxides for Use in Microelectronic, Optical and...
- Non-Crystalline Oxides for Use in Microelectronic, Optical and Other Applications Application Type: Foreign National Patent Number: 195870 Country: Taiwan Status: Filed on ...
URL: https://www.src.org/library/patent/p0227/
Modified: 2004-11-02 - 27KB Find Similar Documents
- 6:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB Find Similar Documents
- 7:
High Dielectric Constant Metal Silicates Formed By Controlled...
- High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB Find Similar Documents
- 8:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Divisional Patent Number: 7141858 Country: United States Status: Filed on 18-Jun-2004, ...
URL: https://www.src.org/library/patent/p0482/
Modified: 2006-11-28 - 22KB Find Similar Documents
- 9:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Utility Patent Number: 6794234 Country: United States Status: Filed on 9-Dec-2002, Issued on ...
URL: https://www.src.org/library/patent/p0295/
Modified: 2004-09-21 - 22KB Find Similar Documents
- 10:
Novel Non-Crystalline Oxides for Use in Microelectronic, Optical...
- Novel Non-Crystalline Oxides for Use in Microelectronic, Optical and Other Applications Application Type: Utility Patent Number: 6787861 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0225/
Modified: 2004-09-07 - 27KB Find Similar Documents
- 11:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB Find Similar Documents
- 12:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB Find Similar Documents
- 13:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Utility Patent Number: 6552403 Country: United ...
URL: https://www.src.org/library/patent/p0095/
Modified: 2003-04-22 - 24KB Find Similar Documents
- 14:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
Modified: 2003-11-11 - 24KB Find Similar Documents
- 15:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB Find Similar Documents
- 16:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Divisional Patent Number: 6686264 Country: ...
URL: https://www.src.org/library/patent/p0374/
Modified: 2004-02-03 - 24KB Find Similar Documents
- 17:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB Find Similar Documents
- 18:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB Find Similar Documents
- 19:
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
- High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB Find Similar Documents
- 20:
Growth of Inorganic Thin Films using Self-Assembled Monolayers...
- Growth of Inorganic Thin Films using Self-Assembled Monolayers as Nucleation Sites Application Type: Utility Patent Number: 7829150 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1139/
Modified: 2010-11-09 - 22KB Find Similar Documents
- 21:
Oxidation Resistant High Conductivity Copper Layers For Microelectroni...
- Oxidation Resistant High Conductivity Copper Layers For Microelectronic Applications and Process of Making Same Application Type: Divisional Patent Number: 5959358 Country: United ...
URL: https://www.src.org/library/patent/p0054/
Modified: 1999-09-28 - 24KB Find Similar Documents
- 22:
Passivated Copper Conductive Layers for Microelectric Applications...
- Passivated Copper Conductive Layers for Microelectric Applications Application Type: Divisional Patent Number: 6057223 Country: United States Status: Filed on 10-Feb-1998, Issued ...
URL: https://www.src.org/library/patent/p0048/
Modified: 2000-05-02 - 22KB Find Similar Documents
- 23:
Passivated Copper Conductive Layers for Microelectronic Applications...
- Passivated Copper Conductive Layers for Microelectronic Applications and Methods of Manufacturing Same Application Type: Utility Patent Number: 5766379 Country: United States ...
URL: https://www.src.org/library/patent/p0015/
Modified: 1998-06-16 - 24KB Find Similar Documents
- 24:
Selective Germanium Deposition on Silicon and Resulting Structures...
- Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5162246 Country: United States Status: Filed on 8-Nov-1991, Issued on ...
URL: https://www.src.org/library/patent/p0146/
Modified: 1992-11-10 - 22KB Find Similar Documents
- 25:
Molecular Transfer Printing Using Block Copolymers (Patent P1163...
- Molecular Transfer Printing Using Block Copolymers Application Type: Utility Patent Number: 8133341 Country: United States Status: Filed on 1-Apr-2009, Issued on 13-Mar-2012, ...
URL: https://www.src.org/library/patent/p1163/
Modified: 2012-03-13 - 26KB Find Similar Documents
- 26:
Molecular Transfer Printing Using Block Copolymers (Patent P1181...
- Molecular Transfer Printing Using Block Copolymers Application Type: Patent Cooperation Treaty Patent Number: PCT/US20090392 Status: Filed on 14-May-2009, Issued on 26-Feb-2011, ...
URL: https://www.src.org/library/patent/p1181/
Modified: 2011-02-26 - 26KB Find Similar Documents
1 through 26 of
26 similar documents, best matches first. |
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