Questions?
[x] GRC Science Area
MPS – Material & Process Sciences

Content Type
Patent Filings 21
Other 1

SRC Program
GRC 22

Center
ACE4S 1
CAIST 1
CDADIC 1
CEMPI 1
CHIRP 1
EBSM 1
IPC 1
NCRC 1
TxACE 1

Thrust/Theme
Factory Systems 10
PAT – Patterning 5
Back End Processes 4
BEP – Back End Processes 2
DCMOS – Digital CMOS Technologie... 2
Front End Processes 2
Materials 2
Pat(MPS) – Patterning 2
ADS – Alternative Device Structu... 1
AIHW – Artificial Intelligence H... 1
AMS – Analog and Mixed-Signal De... 1
AMS-CSD – Analog/Mixed-Signal Ci... 1
AdvTech – Advanced Technology 1
Advanced Bipolar SOI-MOS Transis... 1
Advanced Devices 1
Advanced Devices & Technologies 1
Advanced Technology Option 1
Analysis Design & Simulation 1
C&S – Controls and Sensing 1
CADT – Computer-Aided Design and... 1
CD – Circuit Design 1
CFM&TCM – CFM & Total Chemical M... 1
CM – Compact Modeling 1
CSR – Cross-Disciplinary Semicon... 1
Contamination Control 1
Cost Reduction 1
DE – Design Environment 1
DSMS – Device Sciences Modeling ... 1
DV – Design Verification 1
Defect Reduction 1
Deposition 1
DesSyn – Design Synthesis 1
DesTech – Design Techniques 1
Doping Technologies 1
EP3C – Efficiency and Performanc... 1
ESH – Environment Safety and Hea... 1
Equip Automation & Process Contr... 1
Equip – Equipment 1
Equip. Auto. and Process Control 1
FACSYS – Factory Systems 1
FAM – Factory Automation & Manag... 1
FEOL – FEOL Processes 1
FacOps – Factory Operations 1
HWS – Hardware Security 1
Heat Signal & Power Distribution 1
Heat Signal Power 1
I3T – Innovative and Intelligent... 1
ISD – Integrated System Design 1
Interconnect Architecture 1
LMD – Logic and Memory Devices 1
LPD – Logic & Physical Design 1
Lithography 1
Logic Design 1
Logistics & Modeling/Simulation 1
MT – Memory Technologies 1
MTMP – Metrology Tools Matls & P... 1
Masks 1
Materials & Measurements 1
Metrology 1
Modeling & Simulation 1
Modeling & TCAD 1
Multi-level Interconnect 1
NCR – Non-Classical CMOS Researc... 1
NEM – Nanoengineered Materials 1
NMP – Nanomanufacturing Material... 1
PKG – Packaging 1
PMM – Packaging Materials and Me... 1
PMS – Packaging Modeling and Sim... 1
PS/E – Process Simplification/En... 1
Package & Electrical Design 1
Package Reliability 1
Packaging & Interconnect Systems 1
Packaging Materials Interfaces 1
PatMat – Patterning Materials 1
PatSys – Patterning Systems 1
PhyDes – Physical Design 1
Physical Design 1
Plasma Etch 1
Process Architecture 1
Processes – Processes 1
Quality & Reliability 1
Rapid Yield Learning 1
Reliability 1
Resist 1
SLD – System Level Design 1
SemiSynBio – Semiconductor Synth... 1
Semiconductor Modeling & Simulat... 1
Signal/Power Management 1
Substrates 1
Synthesis & Verification 1
TCAD-MBPS 1
TM – Thermal Management 1
TT – Test & Testability 1
TechCAD – Technology CAD 1
VER – Verification 1

1 through 22 of 22 similar documents, best matches first.   
1: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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2: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB
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3: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB
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4: High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB
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5: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Utility Patent Number: 6552403 Country: United ...
URL: https://www.src.org/library/patent/p0095/
Modified: 2003-04-22 - 24KB
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6: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
Modified: 2003-11-11 - 24KB
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7: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Divisional Patent Number: 6686264 Country: ...
URL: https://www.src.org/library/patent/p0374/
Modified: 2004-02-03 - 24KB
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8: Multiple Copper Vias for Integrated Circuit Metallization and...
Multiple Copper Vias for Integrated Circuit Metallization and Methods of Fabricating Same Application Type: Utility Patent Number: 6919639 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0268/
Modified: 2005-07-19 - 22KB
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9: Semiconductor Devices Having an Interfacial Dielectric Layer...
Semiconductor Devices Having an Interfacial Dielectric Layer and Related Methods Application Type: Utility Patent Number: 7507629 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0450/
Modified: 2009-03-24 - 23KB
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10: Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit...
Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit Devices Application Type: Utility Patent Number: 7144803 Country: United States Status: Filed on 16-Apr-2004, ...
URL: https://www.src.org/library/patent/p0451/
Modified: 2006-12-05 - 22KB
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11: Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation - Method claims Application Type: Utility Patent Number: 6753229 Country: United States Status: Filed on 24-Nov-1999, ...
URL: https://www.src.org/library/patent/p0086/
Modified: 2004-06-22 - 26KB
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12: Fluorine Diffusion Barriers for Fuorinated Dielectrics in Integrated...
Fluorine Diffusion Barriers for Fuorinated Dielectrics in Integrated Circuits Application Type: Utility Patent Number: 6818990 Country: United States Status: Filed on 3-Apr-2000, ...
URL: https://www.src.org/library/patent/p0589/
Modified: 2004-11-16 - 22KB
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13: Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation Application Type: Foreign National Patent Number: NI154458 Country: Taiwan Status: Filed on 1-Dec-1999, Issued on ...
URL: https://www.src.org/library/patent/p0211/
Modified: 2003-05-07 - 26KB
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14: Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation - device claims Application Type: Utility Patent Number: 6855994 Country: United States Status: Filed on 5-Sep-2001, ...
URL: https://www.src.org/library/patent/p0259/
Modified: 2005-02-15 - 26KB
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15: Methods for Removing Contaminants on a Substrate (Patent P0252...
Methods for Removing Contaminants on a Substrate Application Type: Utility Patent Number: 6933235 Country: United States Status: Filed on 21-Nov-2002, Issued on 23-Aug-2005, Patent ...
URL: https://www.src.org/library/patent/p0252/
Modified: 2005-08-23 - 22KB
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16: Process for Forming Hafnium Oxide Films (Patent P0235) - SRC
Process for Forming Hafnium Oxide Films Application Type: Utility Patent Number: 6683011 Country: United States Status: Filed on 14-Nov-2001, Issued on 27-Jan-2004, Patent Expired ...
URL: https://www.src.org/library/patent/p0235/
Modified: 2004-01-27 - 22KB
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17: High Dielectric Constant Metal Silicates Formed By Controlled...
High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB
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18: CHARACTERIZING ABERRATIONS IN AN IMAGING LENS AND APPLICATIONS...
CHARACTERIZING ABERRATIONS IN AN IMAGING LENS AND APPLICATIONS TO VISUAL TESTING AND INTEGRATED CIRCUIT MASK ANALYSIS Application Type: Utility Patent Number: 7030997 Country: ...
URL: https://www.src.org/library/patent/p0302/
Modified: 2006-04-18 - 22KB
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19: Films for Use in Microelectronic Devices and Methods of Producing...
Films for Use in Microelectronic Devices and Methods of Producing Same Application Type: Utility Patent Number: 6306495 Country: United States Status: Filed on 27-Jul-2000, Issued ...
URL: https://www.src.org/library/patent/p0156/
Modified: 2001-10-23 - 22KB
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20: Films for Use in Microelectronic Devices and Methods of Producing...
Films for Use in Microelectronic Devices and Methods of Producing Same Application Type: Utility Patent Number: 6114032 Country: United States Status: Filed on 10-Apr-1998, Issued ...
URL: https://www.src.org/library/patent/p0155/
Modified: 2000-09-05 - 22KB
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21: Multi-Layered Attenuated Phase Shift Mask and a Method for Making...
Multi-Layered Attenuated Phase Shift Mask and a Method for Making the Mask Application Type: Utility Patent Number: 5939227 Country: United States Status: Filed on 9-Mar-1998, ...
URL: https://www.src.org/library/patent/p0052/
Modified: 1999-08-17 - 30KB
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22: Semiconductor Research Corporation - SRC
GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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1 through 22 of 22 similar documents, best matches first.