[x]
GRC Science Area
MPS – Material & Process Sciences
|
1 through 22 of
22 similar documents, best matches first. |
|
- 1:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB Find Similar Documents
- 2:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB Find Similar Documents
- 3:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB Find Similar Documents
- 4:
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
- High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB Find Similar Documents
- 5:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Utility Patent Number: 6552403 Country: United ...
URL: https://www.src.org/library/patent/p0095/
Modified: 2003-04-22 - 24KB Find Similar Documents
- 6:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
Modified: 2003-11-11 - 24KB Find Similar Documents
- 7:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Divisional Patent Number: 6686264 Country: ...
URL: https://www.src.org/library/patent/p0374/
Modified: 2004-02-03 - 24KB Find Similar Documents
- 8:
Multiple Copper Vias for Integrated Circuit Metallization and...
- Multiple Copper Vias for Integrated Circuit Metallization and Methods of Fabricating Same Application Type: Utility Patent Number: 6919639 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0268/
Modified: 2005-07-19 - 22KB Find Similar Documents
- 9:
Semiconductor Devices Having an Interfacial Dielectric Layer...
- Semiconductor Devices Having an Interfacial Dielectric Layer and Related Methods Application Type: Utility Patent Number: 7507629 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0450/
Modified: 2009-03-24 - 23KB Find Similar Documents
- 10:
Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit...
- Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit Devices Application Type: Utility Patent Number: 7144803 Country: United States Status: Filed on 16-Apr-2004, ...
URL: https://www.src.org/library/patent/p0451/
Modified: 2006-12-05 - 22KB Find Similar Documents
- 11:
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
- Multiple-Thickness Gate Oxide Formed by Oxygen Implantation - Method claims Application Type: Utility Patent Number: 6753229 Country: United States Status: Filed on 24-Nov-1999, ...
URL: https://www.src.org/library/patent/p0086/
Modified: 2004-06-22 - 26KB Find Similar Documents
- 12:
Fluorine Diffusion Barriers for Fuorinated Dielectrics in Integrated...
- Fluorine Diffusion Barriers for Fuorinated Dielectrics in Integrated Circuits Application Type: Utility Patent Number: 6818990 Country: United States Status: Filed on 3-Apr-2000, ...
URL: https://www.src.org/library/patent/p0589/
Modified: 2004-11-16 - 22KB Find Similar Documents
- 13:
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
- Multiple-Thickness Gate Oxide Formed by Oxygen Implantation Application Type: Foreign National Patent Number: NI154458 Country: Taiwan Status: Filed on 1-Dec-1999, Issued on ...
URL: https://www.src.org/library/patent/p0211/
Modified: 2003-05-07 - 26KB Find Similar Documents
- 14:
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
- Multiple-Thickness Gate Oxide Formed by Oxygen Implantation - device claims Application Type: Utility Patent Number: 6855994 Country: United States Status: Filed on 5-Sep-2001, ...
URL: https://www.src.org/library/patent/p0259/
Modified: 2005-02-15 - 26KB Find Similar Documents
- 15:
Methods for Removing Contaminants on a Substrate (Patent P0252...
- Methods for Removing Contaminants on a Substrate Application Type: Utility Patent Number: 6933235 Country: United States Status: Filed on 21-Nov-2002, Issued on 23-Aug-2005, Patent ...
URL: https://www.src.org/library/patent/p0252/
Modified: 2005-08-23 - 22KB Find Similar Documents
- 16:
Process for Forming Hafnium Oxide Films (Patent P0235) - SRC
- Process for Forming Hafnium Oxide Films Application Type: Utility Patent Number: 6683011 Country: United States Status: Filed on 14-Nov-2001, Issued on 27-Jan-2004, Patent Expired ...
URL: https://www.src.org/library/patent/p0235/
Modified: 2004-01-27 - 22KB Find Similar Documents
- 17:
High Dielectric Constant Metal Silicates Formed By Controlled...
- High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB Find Similar Documents
- 18:
CHARACTERIZING ABERRATIONS IN AN IMAGING LENS AND APPLICATIONS...
- CHARACTERIZING ABERRATIONS IN AN IMAGING LENS AND APPLICATIONS TO VISUAL TESTING AND INTEGRATED CIRCUIT MASK ANALYSIS Application Type: Utility Patent Number: 7030997 Country: ...
URL: https://www.src.org/library/patent/p0302/
Modified: 2006-04-18 - 22KB Find Similar Documents
- 19:
Films for Use in Microelectronic Devices and Methods of Producing...
- Films for Use in Microelectronic Devices and Methods of Producing Same Application Type: Utility Patent Number: 6306495 Country: United States Status: Filed on 27-Jul-2000, Issued ...
URL: https://www.src.org/library/patent/p0156/
Modified: 2001-10-23 - 22KB Find Similar Documents
- 20:
Films for Use in Microelectronic Devices and Methods of Producing...
- Films for Use in Microelectronic Devices and Methods of Producing Same Application Type: Utility Patent Number: 6114032 Country: United States Status: Filed on 10-Apr-1998, Issued ...
URL: https://www.src.org/library/patent/p0155/
Modified: 2000-09-05 - 22KB Find Similar Documents
- 21:
Multi-Layered Attenuated Phase Shift Mask and a Method for Making...
- Multi-Layered Attenuated Phase Shift Mask and a Method for Making the Mask Application Type: Utility Patent Number: 5939227 Country: United States Status: Filed on 9-Mar-1998, ...
URL: https://www.src.org/library/patent/p0052/
Modified: 1999-08-17 - 30KB Find Similar Documents
- 22:
Semiconductor Research Corporation - SRC
- GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB Find Similar Documents
1 through 22 of
22 similar documents, best matches first. |
|
|
|