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Degradation models of LDMOS is developed and implemented into commercial TCAD tool.
DS Featured Publication: Report on the Implementation of the Degradation Models in the Commercial Device Simulation Tool
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A predictive technique for determining the remaining useful life of copper wire bonds has been developed.
IPS Featured Publication: Identification of High-propensity of Defects and Field Failures in Copper-aluminum Wire Bonds under Exposure to High-temperature and Humidity
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Tin oxide precursors optimized to maximize performance of printed BEOL-compatible thin film transistors.
NMS Featured Publication: Report on Development of Sol-gel SnO(2) Analog Liquid Phase Precursor and Application to Realization of BEOL-compatible Thin Film Transistors with Mobility >100cm(2)/V(-s) and Operating Voltage <2V
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Study of III-V FETs below 10 nm reveals that quantum confinement in thin body increases gate leakage current.
DS Featured Publication: Modeling III-V Issues
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Ultrathin Ni surface layers seen to significantly reduce polycrystalline and single crystal Cu resistivity.
IPS Featured Publication: Effect of Ni Doping on Electron Scattering at Cu Surfaces and Grain Boundaries: Progress Report with Preliminary Results
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SRC, NIST Introduce Second Phase of Nanoelectronics Research Initiative with $5 Million in Annual Funding to Develop Post-CMOS Electronics
NRI Second Phase Features Multi-University Network Focused on Research Centers at SUNY’s College of Nanoscale Science and Engineering, University of Nebraska-Lincoln and University of Texas at Austin
Press Release
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SRC Upward Trajectory – From Student to FAME as STARnet Center Director
In January, former SRC student Jane P. Chang was announced as the director of FAME.
Article
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SRC, National Science Foundation Introduce Compact Modeling Initiative for Nanotechnology Era
New Nano-Engineered Electronic Device Simulation (NEEDS) Initiative Led by Purdue University Engineering Professor Mark Lundstrom
Press Release
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Prof. Azad Naeemi of Georgia Tech Wins NSF CAREER Award
"Physical Models and Experimental Validation for High-Frequency Multilayer Graphene Interconnects."
SRC In The News
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SEC’s Auburn University Faculty Achievement Award presented to SRC Researcher
Auburn University and the Southeastern Conference have announced that Professor Pradeep Lall, the T. Walter Professor of Mechanical Engineering at Auburn, has been honored with the SEC’s Auburn University Faculty Achievement Award for 2012-2013. “Dr. Lall is an outstanding faculty member who is truly dedicated to his students, colleagues and his profession,” said Timothy Boosinger, Auburn University provost and vice president for academic affairs. The SEC Faculty Achievement Awards, created to recognize faculty accomplishments, scholarly contributions and discoveries, were established by the SEC presidents and chancellors and are administered by the SEC provosts. The awards were first presented in 2012. Prof. Lall and his students are currently being supported by the SRC’s Interconnect and Packaging Sciences area within the GRC program.
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Announcing Webmaster e-Workshop: Targeted for GRC TAB and SACC Members
Attend this e-Workshop to learn the five things you can't live without.
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Announcing Webmaster e-Workshop: Targeted for GRC TAB and SACC Members
A combination of guided website tour and engaging information, you will learn more than just the fundamentals. You’ll walk away with a better understanding of your role as a member of the SACC/TAB and what tools you can use to succeed. Attend this e-Workshop to learn the five things you can't live without.
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A summary of data for cerium oxide nanoparticle aggregation kinetics and toxicity studies is presented.
NMS Featured Publication: Report Describing the Contents of the Database
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Selective deposition of ZnO on Si/SiO2 vs. Cu demonstrated using inhibitory self-assembled monolayers (SAMs).
NMS Featured Publication: Initial Report on Selective ALD using Inhibitory Pulsing
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Test structure measures impact of random telegraph noise on ring oscillator frequency.
ICSS Featured Publication: Report on the Measurement Results and Test Methodologies for a Random Telegraph Noise (RTN) Monitoring Chip
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