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SRC and Environmental Research Center Employ Real-Time Monitoring to Slash Water and Energy Usage for Semiconductor Manufacturing
30 Percent Reduction in Wafer Surface Cleaning Requirements Can Benefit Manufacturing Sustainability for Both 300mm and 450mm Processes
Press Release
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Workshop on Challenges in PV Science to be Held August 2-3 at Purdue
Challenges in PV Science, Technology, and Manufacturing: A Workshop on the Role of Theory, Modeling, and Simulation - ERI workshop on Augsuts 2-3 at Purdue University
SRC In The News
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ICSS Featured Publication
Adaptive core architecture reduces peak power by 20% with little performance loss, outperforming DVFS methods.
Featured Publication
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IPS Featured Publication
A new merged metallic and adhesive, low-temperature bonding technique was developed for 3D integration.
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CADTS Featured Publication
A fabricated 3D logic-DRAM SoC chip demonstrates parallel memory accesses to alleviate pin count pressure.
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DS Featured Publication
Multi-gate In(0.7)Ga(0.3)As quantum well FETs are simulated, fabricated, and characterized in detail.
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CADTS Featured Publication
New SAT solver solves 33% more benchmarks than nearest state-of-the-art technique.
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CADTS Featured Publication
New variation aware electromigration evaluation tool points designers to critical chip areas to be improved.
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DS Featured Publication
Physically based TCAD was developed for hot-carrier-stress degradation prediction in lateral DMOS transistors.
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IPS Featured Publication
A suite of critical modeling tools were developed to design and scale plasma equipment and processes.
Featured Publication
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SRC Celebrates its 30th Anniversary
Thirty years of collaborative research leadership in semiconductor and related technologies.
Article
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MIT: Self-assembling Structures Align Wires, Bends and Junctions
Researchers at MIT have found a new way of making complex three-dimensional structures using self-assembling polymer materials that form tiny wires and junctions.
SRC In The News
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SRC and Stanford University Prove New Circuit Pattern-Design Process, See Promise for 14 Nanometer Design with Directed Self-Assembly
Unprecedented Accuracy for Placement of Contact Holes Helps Chip Industry Push Back Costly Migration to EUV Lithography
Press Release
