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ICSS Featured Publication
Automatic generation of post-silicon validation now has 4X better coverage and runs a million times faster.
Featured Publication
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CADTS Featured Publication
Experiments with large lots of industrial parts show potential for burn-in reduction and cost saving.
Featured Publication
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IPS Featured Publication
A new understanding of intrinsic and metal induced failure mechanisms in ultra low-k films was developed.
Featured Publication
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DS Featured Publication
Aspect ratio trapping for InGaAs epi on Si using nanoscale trenches yields 3 orders reduction in dislocations.
Featured Publication
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SRC and Cornell Introduce Lithographic Breakthrough with Laser Spike Anneal to Create Higher Fidelity Circuit Patterns
Millisecond Transient Laser Anneal Outperforms State-of-Art Hotplate Bake for Both 193-Nanometer and EUV Lithography Applications
Press Release
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Four ERI students win awards at 38th IEEE Photovoltaic Specialists Conference
Four ERI students have won awards at the 38th IEEE Photovoltaic Specialists Conference (IEEE PVSC) in Austin, Texas which was held June 3rd-8th.
Article
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Presentations from TECHCON 2012 are now available
Proceedings from the event as well as presentations and award winners are now available on the TECHCON 2012 event page.
SRC In The News
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SRC Recognizes Nineteen Superb Mentors
Nineteen industry representatives were recognized at TECHCON 2012 as the 2012 Mahboob Khan Outstanding Industry Liaison Award Winners
SRC In The News
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SRC Honors Professors from UC Berkeley and MIT for Advancing Chip Technology
Professors Receive Awards for World-Class Research in Areas Vital to Semiconductor Industry at Annual SRC TECHCON Conference
Press Release
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TECHCON 2012 is underway in Austin
Highlighting smart students, break-through research, and a dynamic industry.
Article
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ICSS Featured Publication
Architecture for runtime adaptable accuracy computing shows 37% power savings over conventional CLA adders.
Featured Publication
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ICSS Featured Publication
Novel near-threshold I/O architecture for 8 Gbps operation achieves less than 0.7 pJ/bit
Featured Publication
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CADTS Featured Publication
New method reduces aging effect on path delay by up to 50% with negligible area and power overhead.
Featured Publication
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DS Featured Publication
InGaAs surface prepared by extended TMA predosing prior to ALD of Al(2)O(3) exhibit low Dit of 1E12 /cm2-eV.
Featured Publication
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SRC Celebrates 30 Years of Leading University Technology Research at Annual TECHCON Conference
TECHCON Conference Sept. 10-11 Showcases Best of University-Driven Semiconductor Industry Research and Students
Press Release
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