DEEP3M-T1
Devices

Daniel Ralph, Cornell

The focus of this them will be design, demonstrate, model and benchmark SOTFET and XSOTFET devices, taking advantage of layered crystals with no broken bonds or passivated semiconductor membranes.

DEEP3M-T1 Metrics

  1. Since Inception

    1 Projects
    1 Universities
    3 Research Scholars
    3 Faculty Researchers
    11 Liaisons
    13 Research Data
    2 Patent Applications
Updated: 8-May-2024, 12:05 a.m. ET

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

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