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| 1 through 26 of
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- 1:
Method for Patterning a Radiation Sensitive Layer (Patent P0087...
- Method for Patterning a Radiation Sensitive Layer Application Type: Utility Patent Number: 6509138 Country: United States Status: Filed on 12-Jan-2000, Issued on 21-Jan-2003 ...
URL: https://www.src.org/library/patent/p0087/
Modified: 2003-01-21 - 22KB
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- 2:
Solventless, Resistless, Direct Dielectric Patterning (Patent...
- Solventless, Resistless, Direct Dielectric Patterning Application Type: Foreign National Patent Number: 171285 Country: Taiwan Status: Filed on 9-Jan-2001, Issued on 2-Jun-2003, ...
URL: https://www.src.org/library/patent/p0207/
Modified: 2003-06-02 - 22KB
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- 3:
Solventless, Resistless, Direct Dielectric Patterning (Patent...
- Solventless, Resistless, Direct Dielectric Patterning Application Type: European Patent Office Patent Number: 1269259 Status: Filed on 11-Jan-2001, Issued on 8-Aug-2012, Patent ...
URL: https://www.src.org/library/patent/p0308/
Modified: 2012-08-08 - 22KB
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- 4:
Electrical Device Including Dielectric Layer Formed By Direct...
- Electrical Device Including Dielectric Layer Formed By Direct Patterning Process Application Type: Divisional Patent Number: 6946736 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0327/
Modified: 2005-09-20 - 22KB
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- 5:
Enhanced Stripping of Implanted Resists (Patent P1259) - SRC
- Enhanced Stripping of Implanted Resists Application Type: Utility Patent Number: 8772170 Country: United States Status: Filed on 29-Dec-2010, Issued on 8-Jul-2014, Patent Abandoned ...
URL: https://www.src.org/library/patent/p1259/
Modified: 2014-07-08 - 25KB
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- 6:
Passivated Copper Conductive Layers for Microelectronic Applications...
- Passivated Copper Conductive Layers for Microelectronic Applications and Methods of Manufacturing Same Application Type: Utility Patent Number: 5766379 Country: United States ...
URL: https://www.src.org/library/patent/p0015/
Modified: 1998-06-16 - 24KB
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- 7:
Multi-Layer Semiconductor Structure Incorporating an Interference...
- Multi-Layer Semiconductor Structure Incorporating an Interference Shielding Portion Application Type: Utility Patent Number: 7067909 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0435/
Modified: 2006-06-27 - 21KB
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- 8:
Atomic Layer Deposited (ALD) Oxide Semiconductors for Integrated...
- Atomic Layer Deposited (ALD) Oxide Semiconductors for Integrated Circuits (ICS) Application Type: Utility Country: United States Status: Filed on 8-Dec-2021, Published by Patent ...
URL: https://www.src.org/library/patent/p2000/
Modified: 2021-12-08 - 23KB
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- 9:
Semiconductor Devices Having an Interfacial Dielectric Layer...
- Semiconductor Devices Having an Interfacial Dielectric Layer and Related Methods Application Type: Utility Patent Number: 7507629 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0450/
Modified: 2009-03-24 - 23KB
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- 10:
Method of Forming a Multi-Layer Semiconductor Structure Having...
- Method of Forming a Multi-Layer Semiconductor Structure Having a Seam-Less Bonding Interface Application Type: Utility Patent Number: 7064055 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p0434/
Modified: 2006-06-20 - 22KB
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- 11:
Low Temperature Atomic Layer Deposition of Oxides on Compound...
- Low Temperature Atomic Layer Deposition of Oxides on Compound Semiconductors Application Type: Utility Patent Number: 10134585 Country: United States Status: Filed on 19-Aug-2015, ...
URL: https://www.src.org/library/patent/p1554/
Modified: 2018-11-20 - 22KB
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- 12:
Method for Forming a Layer of Uniform Thickness On a Semiconductor...
- Method for Forming a Layer of Uniform Thickness On a Semiconductor Wafer During Rapid Thermal Processing Application Type: Utility Patent Number: 5439850 Country: United States ...
URL: https://www.src.org/library/patent/p0033/
Modified: 1995-08-08 - 21KB
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- 13:
Method of Forming a Multi-Layer Semiconductor Structure Incorporating...
- Method of Forming a Multi-Layer Semiconductor Structure Incorporating a Processing Handle Member Application Type: Utility Patent Number: 7307003 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0575/
Modified: 2007-12-11 - 22KB
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- 14:
Single-Mask Double-Patterning Lithography (Patent P1185) - SRC
- Single-Mask Double-Patterning Lithography Application Type: Utility Patent Number: 8415089 Country: United States Status: Filed on 15-Mar-2010, Issued on 9-Apr-2013, Patent ...
URL: https://www.src.org/library/patent/p1185/
Modified: 2013-04-09 - 22KB
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- 15:
Establishing a Uniformly Thin Dielectric Layer on Graphene in...
- Establishing a Uniformly Thin Dielectric Layer on Graphene in a Semiconductor Device without Affecting the Properties of Graphene Application Type: Utility Patent Number: 8198707 ...
URL: https://www.src.org/library/patent/p1099/
Modified: 2012-06-12 - 21KB
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- 16:
Patterning Electronic Devices using Reactive-Ion Etching of Tin...
- Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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- 17:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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- 18:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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- 19:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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- 20:
Deposition of Germanium Thin Films on Silicon Dioxide Employing...
- Deposition of Germanium Thin Films on Silicon Dioxide Employing Interposed Polysilicon Layer Application Type: Divisional Patent Number: 5250452 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0082/
Modified: 1993-10-05 - 22KB
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- 21:
Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible...
- Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible P-Type Oxide Semiconductor Application Type: Utility Country: United States Status: Filed on 20-Dec-2022, ...
URL: https://www.src.org/library/patent/p2098/
Modified: 2022-12-20 - 25KB
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- 22:
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
- Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB
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- 23:
Multi-Layered Attenuated Phase Shift Mask and a Method for Making...
- Multi-Layered Attenuated Phase Shift Mask and a Method for Making the Mask Application Type: Utility Patent Number: 5939227 Country: United States Status: Filed on 9-Mar-1998, ...
URL: https://www.src.org/library/patent/p0052/
Modified: 1999-08-17 - 30KB
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- 24:
Method for ALD Deposition on Inert Surfaces Via Al203 Nanoparticles...
- Method for ALD Deposition on Inert Surfaces Via Al203 Nanoparticles Application Type: Utility Patent Number: 11127590 Country: United States Status: Filed on 5-Dec-2017, Issued on ...
URL: https://www.src.org/library/patent/p1750/
Modified: 2021-09-21 - 25KB
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- 25:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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- 26:
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
- Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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