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CD – Circuit Design 59
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NMP – Nanomanufacturing Material... 15
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CRISP-T1 – Hardware Support for ... 9
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AMML-T1 – Antiferromagnetic Magn... 6
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CBRIC-T1 – Neuro-inspired Algori... 2
CRISP-T3 – Scaling Applications ... 2
ComSenTer-T1 – Systems and Algor... 2
DesSyn – Design Synthesis 2
LMD – Logic and Memory Devices 2
NEWLIMITS-T2 – 2D Materials Devi... 2
Processes – Processes 2
AMS – Analog and Mixed-Signal De... 1
ASCENT-T4 – Merged Logic Memory ... 1
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1: Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible...
Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible P-Type Oxide Semiconductor Application Type: Utility Country: United States Status: Filed on 20-Dec-2022, ...
URL: https://www.src.org/library/patent/p2098/
Modified: 2022-12-20 - 25KB
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2: Atomic Layer Deposited (ALD) Oxide Semiconductors for Integrated...
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URL: https://www.src.org/library/patent/p2000/
Modified: 2021-12-08 - 23KB
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3: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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4: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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5: Low-Power, P-Channel Enhancement-Type Metal-Oxide Semiconductor...
Low-Power, P-Channel Enhancement-Type Metal-Oxide Semiconductor Field-Effect Transistor (PMOSFET) SRAM Cells Application Type: Utility Patent Number: 7286389 Country: United States ...
URL: https://www.src.org/library/patent/p0579/
Modified: 2007-10-23 - 24KB
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6: Optoelectronic Devices Having Arrays of Quantum Dot Compound...
Optoelectronic Devices Having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 7265375 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0553/
Modified: 2007-09-04 - 25KB
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7: Optoelectronic Devices having Arrays of Quantum Dot Compound...
Optoelectronic Devices having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 6914256 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0443/
Modified: 2005-07-05 - 25KB
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8: Semiconductor Devices Having an Interfacial Dielectric Layer...
Semiconductor Devices Having an Interfacial Dielectric Layer and Related Methods Application Type: Utility Patent Number: 7507629 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0450/
Modified: 2009-03-24 - 23KB
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9: Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB
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10: Methods of Forming Nano-Scale Electronic and Optoelectronic Devices...
Methods of Forming Nano-Scale Electronic and Optoelectronic Devices Using Non-Photolithographically Defined Nano-Channel Templates Application Type: Utility Patent Number: 6709929 ...
URL: https://www.src.org/library/patent/p0301/
Modified: 2004-03-23 - 25KB
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11: Method for ALD Deposition on Inert Surfaces Via Al203 Nanoparticles...
Method for ALD Deposition on Inert Surfaces Via Al203 Nanoparticles Application Type: Utility Patent Number: 11127590 Country: United States Status: Filed on 5-Dec-2017, Issued on ...
URL: https://www.src.org/library/patent/p1750/
Modified: 2021-09-21 - 25KB
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12: Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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13: Patterning Electronic Devices using Reactive-Ion Etching of Tin...
Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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14: Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation - device claims Application Type: Utility Patent Number: 6855994 Country: United States Status: Filed on 5-Sep-2001, ...
URL: https://www.src.org/library/patent/p0259/
Modified: 2005-02-15 - 26KB
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15: Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation - Method claims Application Type: Utility Patent Number: 6753229 Country: United States Status: Filed on 24-Nov-1999, ...
URL: https://www.src.org/library/patent/p0086/
Modified: 2004-06-22 - 26KB
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16: Multiple-Thickness Gate Oxide Formed by Oxygen Implantation ...
Multiple-Thickness Gate Oxide Formed by Oxygen Implantation Application Type: Foreign National Patent Number: NI154458 Country: Taiwan Status: Filed on 1-Dec-1999, Issued on ...
URL: https://www.src.org/library/patent/p0211/
Modified: 2003-05-07 - 26KB
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17: Method for In-Situ Dry Cleaning, Passivation, Functionalization...
Method for In-Situ Dry Cleaning, Passivation, Functionalization of SI-GE Semiconductor Surfaces Application Type: Utility Patent Number: 9818599 Country: United States Status: ...
URL: https://www.src.org/library/patent/p1429/
Modified: 2017-11-14 - 25KB
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18: Method for in-SITU Dry Cleaning, Passivation, and Functionalization...
Method for in-SITU Dry Cleaning, Passivation, and Functionalization of GE Semiconductor Surfaces Application Type: Utility Patent Number: 9117653 Country: United States Status: ...
URL: https://www.src.org/library/patent/p1477/
Modified: 2015-08-25 - 25KB
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19: Process for Forming Hafnium Oxide Films (Patent P0235) - SRC
Process for Forming Hafnium Oxide Films Application Type: Utility Patent Number: 6683011 Country: United States Status: Filed on 14-Nov-2001, Issued on 27-Jan-2004, Patent Expired ...
URL: https://www.src.org/library/patent/p0235/
Modified: 2004-01-27 - 22KB
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20: Method for Cleaning, Passivation and Functionalization of SI...
Method for Cleaning, Passivation and Functionalization of SI-GE Semiconductor Sufraces Application Type: Divisional Patent Number: 10483097 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1734/
Modified: 2019-11-19 - 25KB
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21: Antiferromagnet Field-Effect Based Logic Circuits Including Spin...
Antiferromagnet Field-Effect Based Logic Circuits Including Spin Orbital Coupling Channels with Opposing Preferred Current Paths and Related Structures Application Type: Utility ...
URL: https://www.src.org/library/patent/p1799/
Modified: 2021-06-22 - 24KB
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22: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Utility Patent Number: 6552403 Country: United ...
URL: https://www.src.org/library/patent/p0095/
Modified: 2003-04-22 - 24KB
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23: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Divisional Patent Number: 6686264 Country: ...
URL: https://www.src.org/library/patent/p0374/
Modified: 2004-02-03 - 24KB
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24: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
Modified: 2003-11-11 - 24KB
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25: Integrated Circuit With Topological Semimetal Interconnect (Patent...
Integrated Circuit With Topological Semimetal Interconnect Application Type: Utility Country: United States Status: Filed on 20-Jul-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2088/
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26: Enhanced Stripping of Implanted Resists (Patent P1259) - SRC
Enhanced Stripping of Implanted Resists Application Type: Utility Patent Number: 8772170 Country: United States Status: Filed on 29-Dec-2010, Issued on 8-Jul-2014, Patent Abandoned ...
URL: https://www.src.org/library/patent/p1259/
Modified: 2014-07-08 - 25KB
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27: Germanium Silicon Dioxide Gate MOSFET (Patent P0098) - SRC
Germanium Silicon Dioxide Gate MOSFET Application Type: Utility Patent Number: 5101247 Country: United States Status: Filed on 27-Apr-1990, Issued on 31-Mar-1992, Patent Expired ...
URL: https://www.src.org/library/patent/p0098/
Modified: 1992-03-31 - 22KB
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28: Testing Monolithic Three Dimensional Integrated Circuits (Patent...
Testing Monolithic Three Dimensional Integrated Circuits Application Type: Utility Patent Number: 10775429 Country: United States Status: Filed on 2-Nov-2017, Issued on 15-Sep-2020 ...
URL: https://www.src.org/library/patent/p1746/
Modified: 2020-09-15 - 25KB
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29: Surface and Gas Phase Doping of III-V Semiconductors (Patent...
Surface and Gas Phase Doping of III-V Semiconductors Application Type: Utility Patent Number: 8697467 Country: United States Status: Filed on 26-Jul-2010, Issued on 15-Apr-2014, ...
URL: https://www.src.org/library/patent/p1227/
Modified: 2014-04-15 - 23KB
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30: Spin Transistor Having Multiferroic Gate Dielectric (Patent P1282...
Spin Transistor Having Multiferroic Gate Dielectric Application Type: Utility Patent Number: 8860006 Country: United States Status: Filed on 25-Mar-2011, Issued on 14-Oct-2014, ...
URL: https://www.src.org/library/patent/p1282/
Modified: 2014-10-14 - 23KB
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1 through 30 of 702 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>