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Promising non-PFC chemistries for etch of C-doped silica and magnetic materials identified through use of volatility diagrams.
NMS Featured Publication: Report on Non-PFC Plasma Chemistries for Patterning Complex Materials and Structures
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Rule-based directed self-assembly of non-trivial circuit-like block-copolymer patterns from simple template tiles demonstrated.
NMS Featured Publication: Report on Directed Self-assembly of Block Copolymers for Nanolithography
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TxACE shows a 180-300 GHz transmitter for a spectrometer application.
ICSS Featured Publication: 90-150 GHz Transmitter with Output Power >0 dBm
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New technique for establishing a formal evaluation structure for automotive network security.
ICSS Featured Publication: Report on Establishing a Formal Basis for System's Root of Trust and Security Primitives
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New Embedded Deterministic Test compression through a high-speed serial interface shows an equivalent 100X compression ratio.
CADTS Featured Publication: The High-speed Serial I/O Protocol to Transfer Test Related Information Between ATE and SoC
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A novel Electrochemical Cell Impedance Spectroscopy (ECIS) technique developed to rapidly assess nanoparticle toxicity.
NMS Featured Publication: Final Report on Graphene Heterostructures for Logic and Interconnects
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Ni-coated single crystal Cu creates less surface scattering than Cu-air interfaces leading to a reduction in resistivity by 11%.
IPS Featured Publication: Ni Doping on Cu Surfaces: Confirmation for Reduced Copper Resistivity
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Palmstrom Recalls Work on Growth of Novel Materials and Structures
Imagine that you could combine materials with different properties into new heterostructures with a vast range of designer properties. Now imagine what you could create.
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Prof. Klimeck to Co-lead New Center for Materials Engineering Modeling at Purdue
Prof. Gerhard Klimeck was named the Reilly Director of the Center for Predictive Materials and Devices (c-PRIMED) at Purdue University. C-PRIMED is focused on modeling for materials engineering. Klimeck is a professor of electrical and computer engineering and director of the Network for Computational Nanotechnology and its signature nanoHUB.org.
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Professor Andrew Singer Nominated as Signal Processing Society Distinguished Lecturer for 2014-2015
Professor Andrew Singer was nominated to serve as the Signal Processing Society Distinguished Lecturer for 2014-2015.
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Chen Wang, Jon Wyrick, and Miguel Isarraz of UCR Receive Prestigious Fellowships
On March 29, 2013, three graduate students of the Bartels Lab received prestigious fellowships: Chen Wang, Miguel Isarraz, and Jon Wyrick.
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Graphene Non-Boolean Logic Paper
The paper by three FAME co-PIs on graphene non-Boolean logic attracted major media attention. The story also appeared in MIT Technology Review.
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Professor Roy Receives the Fulbright-Nehru Distinguished Chair Award
Professor Kaushik Roy of Purdue University has been awarded a Fulbright-Nehru Distinguished Chair award and will be traveling to Bombay, India for the spring semester in 2014. Prof. Roy will spend the semester on sabbatical at the Institute of Technology, Bombay.
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HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
Recently, LEAST researchers at the University of Texas at Dallas reported their findings related to the atomic layer deposition (ALD) of HfO2 on the MoS2 surface. By performing in situ studies on clean and contaminated surfaces, it was found that no covalent bonding exists between the HfO2 and MoS2, and non-uniform ALD of HfO2 on clean MoS2 crystal was observed. It was also found that the presence of organic and solvent residues can dramatically change ALD nucleation behavior, consistent with experimental reports in the literature.
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LEAST Researchers Develop TFET SPICE Model
A compact tunnel field-effect transistor (TFET) SPICE model was completed and released to the LEAST circuit design community by researchers at the University of Notre Dame. The model, based on the Kane-Sze formula, captures the unique features of the TFET, including the decrease in subthreshold swing with drain current and the superlinear onset of the output characteristic. The model has fairly general validity and is not specific to a particular TFET geometry. Good agreement is shown with published atomistic simulations of an InAs double-gate TFET with gate perpendicular to the tunnel junction and with numerical simulations of a broken-gap AlGaSb/InAs TFET with gate in parallel with the tunnel junction. The model was implemented in HSPICE and AIMSPICE for both n and pTFETs.
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