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2010

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NMS – Nanomanufacturing Sciences

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1: E003676 - Memory Forum - My (Optimistic) 3 Cents to Flash Scaling: My (Optimistic) 3 Cents to Flash Scaling Flash Scaling Electrostatics, Resonant Tunneling and Planar Stacks Edwin C. Kan El t i l d C t E i i Electrical and Computer Engineering ...
URL: https://www.src.org/calendar/e003676/kan.pdf
Modified: 2010-07-29 - 982KB
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2: Nano-Scale Memory Devices: Space-Time_Energy Trade-offs: Nano-Scale Memory Devices: Nano-Scale Memory Devices: Space-Time-Energy Trade-offs Ralph Cavin and Victor Zhirnov Semiconductor Research Corporation p 1 Main Points  Many ...
URL: https://www.src.org/calendar/e003676/cavin.pdf
Modified: 2010-07-29 - 1.1MB
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3: Slide 1: ITRS - Deterministic Doping, Thomas Schenkel, LBNL, Nov. 12, 2010 Single Ion Implantation Thomas Schenkel Lawrence Berkeley National Laboratory T_Schenkel@LBL.gov ITRS - ...
URL: https://www.src.org/calendar/e004100/e004100-00-session2.pdf
Modified: 2010-11-29 - 52.6MB
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4: E003676 - Memory Forum - Scaling Limitations of Flash Memory: Barrier Engineering g g Scaling Limitations of Scaling Limitations of Flash Memory Rich Liu Macronix International Co., Ltd. , Hsinchu, Taiwan, R.O.C. 10/21/2009 2009 A*STAR/SRC/...
URL: https://www.src.org/calendar/e003676/liu.pdf
Modified: 2010-07-29 - 266KB
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5: E003676 - SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies...: SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures I. Introduction In 1957, Richard Feynman asked in a lecture at Caltech if it ...
URL: https://www.src.org/calendar/e003676/finalreport.pdf
Modified: 2010-07-29 - 526KB
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6: Slide 1: 230 250 270 290 310 0 0 0 0 0 0 0 0 1 2 240 260 280 300 V G (mV) V G (mV) I (nA) V SD = - 30 mV The absence of steps the sequential nature coupling of the atom. Figure 4b shows ...
URL: https://www.src.org/calendar/e004100/e004100-00-session3.pdf
Modified: 2010-11-29 - 29.2MB
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7: E003676 - Memory Forum - NV-Memory Elemets with Gate-All-Around...: NV-Memory Elements with Gate-All-Around Transistors Patrick Lo Guo-Qiang Institute of Microelectronics, A*STAR, Singapore SRC/NSF/A*STAR Memory Forum, Oct. 20-21, 2009 Outline . ...
URL: https://www.src.org/calendar/e003676/lo.pdf
Modified: 2010-07-29 - 1.2MB
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8: 2011-2015 SRC-GRC Strategic Plan: 2011-2015 SRC-GRC Strategic Plan Limited Distribution Notice Distribution of the material in this document is limited to employees of SRC-GRC member companies or participating ...
URL: https://www.src.org/...tab2011-2015-grc-strat-full-draft.pdf
Modified: 2010-07-01 - 1.2MB
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9: E003676 - Memory Forum - Performance Projections for Nanomechanical...: SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies 20 20- -21 21 October 2009 October 2009 Performance ...
URL: https://www.src.org/calendar/e003676/oda.pdf
Modified: 2010-07-29 - 2.9MB
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10: Microsoft Word - 2005_Final_ds_msneeds_rev3.doc: 1 Research Needs for Device Sciences Modeling and Simulation (May 6, 2005) SRC Device Sciences 2005 Modeling and Simulation Task Force Contributing organizations: Axcelis, ...
URL: https://www.src.org/...c/ds/research-needs/2005/modeling.pdf
Modified: 2010-06-21 - 37KB
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11: E003676 - Memory Forum - Scaling Limits of MRAM: Scaling limits of MRAM Han Guchang Han Guchang Data Storage Institute, A*STAR Why MRAM SRAM DRAM FLASH MRAM CRAM Nonvolatile No No Yes Yes Yes R d d F t M* M F t F t Read speed ...
URL: https://www.src.org/calendar/e003676/guchang.pdf
Modified: 2010-07-29 - 656KB
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12: E003676 - Memory Forum - Z-RAM Floating Body Memory: Materials...: Z RAM ® Fl ti B d M Z-RAM ® Floating Body Memory: Materials, Devices Materials, Devices and Processes Pierre Fazan Pierre Fazan Innovative Silicon 1015 Lausanne, Switzerland ...
URL: https://www.src.org/calendar/e003676/fazan.pdf
Modified: 2010-07-29 - 457KB
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13: E003676 - Memory Forum - Materials for ReRAM: SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: P D i d A hit t O t 20 21 2009 Si Processes, Devices, and Architectures, Oct. 20-21, 2009, Singapore Panel II: ...
URL: https://www.src.org/calendar/e003676/akinaga.pdf
Modified: 2010-07-29 - 620KB
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14: architectures for Extremely Scaled Memories: Architectures for Architectures for Extremely Scaled Memories Extremely Scaled Memories y y Paul Franzon Department of Electrical and Computer Engineering paulf@ncsu edu ...
URL: https://www.src.org/calendar/e003676/franzon.pdf
Modified: 2010-07-29 - 4.1MB
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15: E003676 - Memory Forum - Materials for Future Memories: Materials For Future Memories Prof. Tseng, Tseung-Yuen 2009/10/20 2009/10/20 Department of Electronics Engineering and Institute of Electronics , National Chiao Tung University, ...
URL: https://www.src.org/calendar/e003676/tseng.pdf
Modified: 2010-07-29 - 4.1MB
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16: E003676 - Memory Forum - 3D Memory Integration Platforms: luj@rpi.edu October 20 October 20- -21, 2009 21, 2009 1 SRC/NSF/A*STAR Forum SRC/NSF/A*STAR Forum 3D Memory Integration Platforms 3D Memory Integration Platforms - - Novel ...
URL: https://www.src.org/calendar/e003676/lu.pdf
Modified: 2010-07-29 - 1.1MB
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17: DSMS Research Needs: 1 Research Needs for Device Sciences Modeling and Simulation (DSMS), April 2008 Device Sciences Semiconductor Research Corporation P.O. Box 12053 Research Triangle Park, NC ...
URL: https://www.src.org/...grc/ds/research-needs/2008/modsin.pdf
Modified: 2010-06-21 - 29KB
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18: E003676 - Memory Forum - Strukov: OUTL OUTL 1. HP's memristor and ap 2. Models of resistance sw 3 Volatility speed tradeo 3. Volatility speed tradeo 4. 3D circuit architecture 5. Proposal for evaluatio LINE LINE ...
URL: https://www.src.org/calendar/e003676/strukov.pdf
Modified: 2010-07-29 - 1.4MB
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19: 2008 GRC compelling research reasons - SRC: 2008 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 1292 Interconnect & Packaging Sciences The New ...
URL: https://www.src.org/...ive/2008/compelling-research-reasons/
Modified: 2010-06-26 - 188KB
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20: 2005 GRC Compelling Research Report - SRC: 2005 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 658 Nanostructure & Integration Sciences Role ...
URL: https://www.src.org/...ive/2005/compelling-research-reasons/
Modified: 2010-06-26 - 189KB
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21: SRC - Research Needs for Extending CMOS to its Ultimate Limits: Research Needs for Extending CMOS to its Ultimate Limit November 1, 2002 Edition 1 2002 CMOS Extension Task Force SRC Nanostructure & Integration Sciences and Materials & Process ...
URL: https://www.src.org/.../grc/nis/research-needs/2002/cmos.pdf
Modified: 2010-06-21 - 286KB
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22: 2010 SRC Operations Plan: 2010 SRC Operations Plan Restricted Distribution: Contains SRC Confidential Material Final - March 2010 2 Table of Contents 2010 SRC Operations Plan Section I Introduction ...
URL: https://www.src.org/...board/executive/etab2010ops-final.pdf
Modified: 2010-07-01 - 541KB
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23: E003676 - Memory Forum - Storage Class Memory: CMOx TM Memory Technology - Applications & Products October 2009 Memory Cell Advantages Memory Cell Advantages © 2009 Unity Semiconductor Corporation 2 The 0 5F 2 Memory Cell The ...
URL: https://www.src.org/calendar/e003676/rinerson.pdf
Modified: 2010-07-29 - 3.0MB
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24: E003676 - Memory Forum - Research Priorities/Needs: A STAR/SRC/NSF Memory Forum Singapore Panel VI: Needs and Models for Collaborative Research A-STAR/SRC/NSF Memory Forum - Singapore Research Priorities/Needs Research Priorities/...
URL: https://www.src.org/calendar/e003676/sandhu.pdf
Modified: 2010-07-29 - 651KB
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25: Foundry Perspective on Embedded Memory: Foundry Perspective on Embedded Memory Panel VI: Needs and Models for Collaborative Research Zoran Krivokapič October 21, 2009 Memory Options y p  Memory can be delivered in ...
URL: https://www.src.org/calendar/e003676/krivokapic.pdf
Modified: 2010-07-29 - 278KB
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26: E003676 - Memory Forum - Perspectives on ReEAM Technologies: In K. Yoo Perspectives on ReRAM technologies 2009. 10. 26 1/12 Evolution patterns of products Can we forecast future products? Perspectives on ReRAM technologies A switching ...
URL: https://www.src.org/calendar/e003676/yoo.pdf
Modified: 2010-07-29 - 3.4MB
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27: e003676 - Memory Forum - eDRAM to the Rescue: IBM Systems and Technology Group - SRDC © 2008 IBM Corporation SRC eDRAM 2009 J.Barth eDRAM to the Rescue Why eDRAM 1/3 Area 1/5 Power SER 2-3 Fit/Mbit vs 2k-5k for SRAM Smaller ...
URL: https://www.src.org/calendar/e003676/barth.pdf
Modified: 2010-07-29 - 1.0MB
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28: E003676 - Memory Forum - Floating Body RAM (FBRAM): Overview...: Floating Body RAM (FBRAM) : g y ( ) Overview and Future Challenges Takeshi Hamamoto Device Process Development Center Device Process Development Center Toshiba Corporation 1 DRAM ...
URL: https://www.src.org/calendar/e003676/hamamoto.pdf
Modified: 2010-07-29 - 234KB
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29: スライド 1: 1 2nd ITRS Deterministic Doping Workshop, Nov. 12, 2010, D. Herr & T. Shinada International Technology Roadmap for Semiconductors 2nd Deterministic Doping Workshop Emerging ...
URL: https://www.src.org/calendar/e004100/e004100-summary.pdf
Modified: 2010-11-29 - 816KB
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30: 2006 GRC compelling research reasons - SRC: 2006 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 1190 Integrated Circuit & Systems Sciences ...
URL: https://www.src.org/...ive/2006/compelling-research-reasons/
Modified: 2010-06-26 - 200KB
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1 through 30 of 31 similar documents, best matches first.

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