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- 1:
 E003676 - SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies...
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures I. Introduction In 1957, Richard Feynman asked in a lecture at Caltech if it ...
URL: https://www.src.org/calendar/e003676/finalreport.pdf
Modified: 2010-07-29 - 526KB
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- 2:
E003676 - Memory Forum - Strukov
- OUTL OUTL 1. HP's memristor and ap 2. Models of resistance sw 3 Volatility speed tradeo 3. Volatility speed tradeo 4. 3D circuit architecture 5. Proposal for evaluatio LINE LINE ...
URL: https://www.src.org/calendar/e003676/strukov.pdf
Modified: 2010-07-29 - 1.4MB
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- 3:
2006 GRC compelling research reasons - SRC
- 2006 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 1190 Integrated Circuit & Systems Sciences ...
URL: https://www.src.org/...ive/2006/compelling-research-reasons/
Modified: 2010-06-26 - 200KB
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- 4:
Nano-Scale Memory Devices: Space-Time_Energy Trade-offs
- Nano-Scale Memory Devices: Nano-Scale Memory Devices: Space-Time-Energy Trade-offs Ralph Cavin and Victor Zhirnov Semiconductor Research Corporation p 1 Main Points Many ...
URL: https://www.src.org/calendar/e003676/cavin.pdf
Modified: 2010-07-29 - 1.1MB
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- 5:
E003676 - Memory Forum - MRAM: Materials and Devices - Current...
- MRAM : Materials and Devices MRAM : Materials and Devices MRAM : Materials and Devices MRAM : Materials and Devices Current Current induced Domain Wall Motion induced Domain Wall ...
URL: https://www.src.org/calendar/e003676/ishiwata.pdf
Modified: 2010-07-29 - 551KB
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- 6:
2011-2015 SRC-GRC Strategic Plan
- 2011-2015 SRC-GRC Strategic Plan Limited Distribution Notice Distribution of the material in this document is limited to employees of SRC-GRC member companies or participating ...
URL: https://www.src.org/...tab2011-2015-grc-strat-full-draft.pdf
Modified: 2010-07-01 - 1.2MB
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- 7:
Slide 1
- 230 250 270 290 310 0 0 0 0 0 0 0 0 1 2 240 260 280 300 V G (mV) V G (mV) I (nA) V SD = - 30 mV The absence of steps the sequential nature coupling of the atom. Figure 4b shows ...
URL: https://www.src.org/calendar/e004100/e004100-00-session3.pdf
Modified: 2010-11-29 - 29.2MB
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- 8:
SRC - Research Needs for Extending CMOS to its Ultimate Limits
- Research Needs for Extending CMOS to its Ultimate Limit November 1, 2002 Edition 1 2002 CMOS Extension Task Force SRC Nanostructure & Integration Sciences and Materials & Process ...
URL: https://www.src.org/.../grc/nis/research-needs/2002/cmos.pdf
Modified: 2010-06-21 - 286KB
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- 9:
2008 GRC compelling research reasons - SRC
- 2008 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 1292 Interconnect & Packaging Sciences The New ...
URL: https://www.src.org/...ive/2008/compelling-research-reasons/
Modified: 2010-06-26 - 188KB
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- 10:
E003676 - Memory Forum - Circuit Elements with Memory: Memristors...
- C O N T R I B U T E D P A P E R Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors Nanoscale devices, that store information without need for a power source, ...
URL: https://www.src.org/calendar/e003676/chua.pdf
Modified: 2010-07-29 - 4.3MB
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- 11:
Eoo3676 - Memory Forum - Capacitorless Double Gate Quantum Well...
- C it l D bl G t Capacitorless Double Gate Quantum Well Single Transistor DRAM: 1T-QW DRAM 1T QW DRAM M. Günhan Ertosun, Krishna C. Saraswat M. Günhan Ertosun, Krishna C. Saraswat ...
URL: https://www.src.org/calendar/e003676/ertosun.pdf
Modified: 2010-07-29 - 877KB
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- 12:
E003676 - Memory Forum - Polymer Electronic Memories: Materials...
- Polymer Electronic Memories: Polymer Electronic Memories: Materials Devices and Mechanisms Materials Devices and Mechanisms Materials, Devices and Mechanisms Materials, Devices and ...
URL: https://www.src.org/calendar/e003676/zhu.pdf
Modified: 2010-07-29 - 3.2MB
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- 13:
E003676 - Memory Forum - Performance Projections for Nanomechanical...
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies 20 20- -21 21 October 2009 October 2009 Performance ...
URL: https://www.src.org/calendar/e003676/oda.pdf
Modified: 2010-07-29 - 2.9MB
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- 14:
E003676 - Memory Forum - Materials for ReRAM
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: P D i d A hit t O t 20 21 2009 Si Processes, Devices, and Architectures, Oct. 20-21, 2009, Singapore Panel II: ...
URL: https://www.src.org/calendar/e003676/akinaga.pdf
Modified: 2010-07-29 - 620KB
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- 15:
E003676 - Memory Forum - Materials for Future Memories
- Materials For Future Memories Prof. Tseng, Tseung-Yuen 2009/10/20 2009/10/20 Department of Electronics Engineering and Institute of Electronics , National Chiao Tung University, ...
URL: https://www.src.org/calendar/e003676/tseng.pdf
Modified: 2010-07-29 - 4.1MB
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- 16:
Microsoft Word - Executive Summary-Schenkel-Nov01-10
- 1 Participants only: Not for distribution. 2nd Deterministic Doping Workshop November 12, 2010, UC Berkeley Executive Summary Title: Deterministic doping by single ion ...
URL: https://www.src.org/...100-03-executive-summary-schenkel.pdf
Modified: 2010-11-09 - 71KB
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- 17:
BEP Research Needs Statement
- Back End Processing Needs Document A. Introduction This document summarizes the research needs of the SRC member companies in the area of Back End Processes (BEP), which includes ...
URL: https://www.src.org/.../ips/research-needs/2010/back end.pdf
Modified: 2010-07-22 - 69KB
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- 18:
E003676 - Memory Forum - Phase Change Materials and PCRAM
- Phase Change Materials and PCRAM PCRAM L.P. Shi and T. C. Chong Data Storage Institute A*STAR (Agency for Science, Technology and Research) Singapore 0/50 Outline Phase Change ...
URL: https://www.src.org/calendar/e003676/shi.pdf
Modified: 2010-07-29 - 1.5MB
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- 19:
Slide 1
- ITRS - Deterministic Doping, Thomas Schenkel, LBNL, Nov. 12, 2010 Single Ion Implantation Thomas Schenkel Lawrence Berkeley National Laboratory T_Schenkel@LBL.gov ITRS - ...
URL: https://www.src.org/calendar/e004100/e004100-00-session2.pdf
Modified: 2010-11-29 - 52.6MB
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- 20:
2007 GRC compelling research reasons - SRC
- 2007 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 1241 Computer Aided Design & Test Sciences A ...
URL: https://www.src.org/...ive/2007/compelling-research-reasons/
Modified: 2010-06-26 - 167KB
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- 21:
E003676 - Memory Forum - Memory Cell Selection Device Enabling...
- Stanford University Memory Cell Selection Device Enabling High Density Device Enabling High Density Memory H S Philip Wong H.-S. Philip Wong Professor of Electrical Engineering ...
URL: https://www.src.org/calendar/e003676/wong.pdf
Modified: 2010-07-29 - 1.1MB
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- 22:
E003676 - Memory - Forum - Low Power Crossbar MRAM with Scalability
- Low Power Crossbar MRAM with Scalability Low Power Crossbar MRAM with Scalability Low Power Crossbar MRAM with Scalability Low Power Crossbar MRAM with Scalability Jimmy Zhu, ABB ...
URL: https://www.src.org/calendar/e003676/jgzhu.pdf
Modified: 2010-07-29 - 1.2MB
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- 23:
E003676 - Memory Forum - Challenges of the Integration of New...
- 1 1 Challenges of the Integration of New Memory into CMOS Platforms 2009.10.20 NEC Electronics Corporation Masao Fukuma 2 Memory in SoCs The total memory size in SoC grows ...
URL: https://www.src.org/calendar/e003676/fukuma.pdf
Modified: 2010-07-29 - 1.7MB
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- 24:
E003676 - Memory Forum - My (Optimistic) 3 Cents to Flash Scaling
- My (Optimistic) 3 Cents to Flash Scaling Flash Scaling Electrostatics, Resonant Tunneling and Planar Stacks Edwin C. Kan El t i l d C t E i i Electrical and Computer Engineering ...
URL: https://www.src.org/calendar/e003676/kan.pdf
Modified: 2010-07-29 - 982KB
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- 25:
Needs document - grey Area between Back-End Processing and Packaging...
- Overlapping Back End Processing and Packaging Needs Document A. Introduction As integration of electronics continues to increase, the demarcation between chip and package ...
URL: https://www.src.org/...ch-needs/2010/overlapping pkg-bep.pdf
Modified: 2010-07-22 - 53KB
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- 26:
architectures for Extremely Scaled Memories
- Architectures for Architectures for Extremely Scaled Memories Extremely Scaled Memories y y Paul Franzon Department of Electrical and Computer Engineering paulf@ncsu edu ...
URL: https://www.src.org/calendar/e003676/franzon.pdf
Modified: 2010-07-29 - 4.1MB
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- 27:
SRC Research Needs for Semiconductor Device Compact Modeling
- Final.April14.doc 1 4/14/03 Research Needs for Semiconductor Device Compact Modeling April 14, 2003 Edition 1 2002 Compact Modeling Task Force Nanostructure & Integration Sciences ...
URL: https://www.src.org/...earch-needs/2003/compact-modeling.pdf
Modified: 2010-06-21 - 149KB
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- 28:
E003676 - Memory Forum - NV-Memory Elemets with Gate-All-Around...
- NV-Memory Elements with Gate-All-Around Transistors Patrick Lo Guo-Qiang Institute of Microelectronics, A*STAR, Singapore SRC/NSF/A*STAR Memory Forum, Oct. 20-21, 2009 Outline . ...
URL: https://www.src.org/calendar/e003676/lo.pdf
Modified: 2010-07-29 - 1.2MB
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