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- 1:
 E003676 - Memory Forum - My (Optimistic) 3 Cents to Flash Scaling
- My (Optimistic) 3 Cents to Flash Scaling Flash Scaling Electrostatics, Resonant Tunneling and Planar Stacks Edwin C. Kan El t i l d C t E i i Electrical and Computer Engineering ...
URL: https://www.src.org/calendar/e003676/kan.pdf
Modified: 2010-07-29 - 982KB
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- 2:
Nano-Scale Memory Devices: Space-Time_Energy Trade-offs
- Nano-Scale Memory Devices: Nano-Scale Memory Devices: Space-Time-Energy Trade-offs Ralph Cavin and Victor Zhirnov Semiconductor Research Corporation p 1 Main Points Many ...
URL: https://www.src.org/calendar/e003676/cavin.pdf
Modified: 2010-07-29 - 1.1MB
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- 3:
Slide 1
- ITRS - Deterministic Doping, Thomas Schenkel, LBNL, Nov. 12, 2010 Single Ion Implantation Thomas Schenkel Lawrence Berkeley National Laboratory T_Schenkel@LBL.gov ITRS - ...
URL: https://www.src.org/calendar/e004100/e004100-00-session2.pdf
Modified: 2010-11-29 - 52.6MB
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- 4:
E003676 - Memory Forum - Scaling Limitations of Flash Memory
- Barrier Engineering g g Scaling Limitations of Scaling Limitations of Flash Memory Rich Liu Macronix International Co., Ltd. , Hsinchu, Taiwan, R.O.C. 10/21/2009 2009 A*STAR/SRC/...
URL: https://www.src.org/calendar/e003676/liu.pdf
Modified: 2010-07-29 - 266KB
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- 5:
E003676 - SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies...
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures I. Introduction In 1957, Richard Feynman asked in a lecture at Caltech if it ...
URL: https://www.src.org/calendar/e003676/finalreport.pdf
Modified: 2010-07-29 - 526KB
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- 6:
Slide 1
- 230 250 270 290 310 0 0 0 0 0 0 0 0 1 2 240 260 280 300 V G (mV) V G (mV) I (nA) V SD = - 30 mV The absence of steps the sequential nature coupling of the atom. Figure 4b shows ...
URL: https://www.src.org/calendar/e004100/e004100-00-session3.pdf
Modified: 2010-11-29 - 29.2MB
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- 7:
E003676 - Memory Forum - NV-Memory Elemets with Gate-All-Around...
- NV-Memory Elements with Gate-All-Around Transistors Patrick Lo Guo-Qiang Institute of Microelectronics, A*STAR, Singapore SRC/NSF/A*STAR Memory Forum, Oct. 20-21, 2009 Outline . ...
URL: https://www.src.org/calendar/e003676/lo.pdf
Modified: 2010-07-29 - 1.2MB
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- 8:
E003676 - Memory Forum - Performance Projections for Nanomechanical...
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies 20 20- -21 21 October 2009 October 2009 Performance ...
URL: https://www.src.org/calendar/e003676/oda.pdf
Modified: 2010-07-29 - 2.9MB
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- 9:
E003676 - Memory Forum - Scaling Limits of MRAM
- Scaling limits of MRAM Han Guchang Han Guchang Data Storage Institute, A*STAR Why MRAM SRAM DRAM FLASH MRAM CRAM Nonvolatile No No Yes Yes Yes R d d F t M* M F t F t Read speed ...
URL: https://www.src.org/calendar/e003676/guchang.pdf
Modified: 2010-07-29 - 656KB
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- 10:
SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies...
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: Processes, Devices and Architectures (by invitation only) Date: Tuesday, Oct. 20, 2009, 8:30 a.m. - Wednesday, Oct. ...
URL: https://www.src.org/calendar/e003676/
Modified: 2010-04-21 - 45KB
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- 11:
E003676 - Memory Forum - Z-RAM Floating Body Memory: Materials...
- Z RAM ® Fl ti B d M Z-RAM ® Floating Body Memory: Materials, Devices Materials, Devices and Processes Pierre Fazan Pierre Fazan Innovative Silicon 1015 Lausanne, Switzerland ...
URL: https://www.src.org/calendar/e003676/fazan.pdf
Modified: 2010-07-29 - 457KB
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- 12:
E003676 - Memory Forum - The Unprecedented Power of Collaborative...
- The Unprecedented Power of Collaborative The Unprecedented Power of Collaborative Research Steven Hillenius October 21 2009 October 21, 2009 Outline The Economic/Research ...
URL: https://www.src.org/calendar/e003676/hillenius.pdf
Modified: 2011-08-16 - 1.1MB
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- 13:
E003676 - Memory Forum - Materials for ReRAM
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: P D i d A hit t O t 20 21 2009 Si Processes, Devices, and Architectures, Oct. 20-21, 2009, Singapore Panel II: ...
URL: https://www.src.org/calendar/e003676/akinaga.pdf
Modified: 2010-07-29 - 620KB
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- 14:
architectures for Extremely Scaled Memories
- Architectures for Architectures for Extremely Scaled Memories Extremely Scaled Memories y y Paul Franzon Department of Electrical and Computer Engineering paulf@ncsu edu ...
URL: https://www.src.org/calendar/e003676/franzon.pdf
Modified: 2010-07-29 - 4.1MB
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- 15:
E003676 - Memory Forum - Materials for Future Memories
- Materials For Future Memories Prof. Tseng, Tseung-Yuen 2009/10/20 2009/10/20 Department of Electronics Engineering and Institute of Electronics , National Chiao Tung University, ...
URL: https://www.src.org/calendar/e003676/tseng.pdf
Modified: 2010-07-29 - 4.1MB
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- 16:
3D IMAPS
- Tezzaron Semiconductor 05/05/2011 SRC 3D Summit Bob Patti, CTO rpatti@tezzaron.com 1 Tezzaron Semiconductor 05/05/2011 Why We Scale? 2 >180nm 90nm 65nm 130nm 45nm 28nm 22nm 16nm ...
URL: https://www.src.org/calendar/e004357/04-patti.pdf
Modified: 2011-05-04 - 4.4MB
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- 17:
E003676 - Memory Forum - 3D Memory Integration Platforms
- luj@rpi.edu October 20 October 20- -21, 2009 21, 2009 1 SRC/NSF/A*STAR Forum SRC/NSF/A*STAR Forum 3D Memory Integration Platforms 3D Memory Integration Platforms - - Novel ...
URL: https://www.src.org/calendar/e003676/lu.pdf
Modified: 2010-07-29 - 1.1MB
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- 18:
2009 Summer Study: NRI Program Directions and Promising Outputs
- NRI Program Directions and Promising Outputs NRI Program Directions and Promising Outputs ETAB Summer Study Jeff Welser June, 2009 Some information in this presentation is SRC-NRI ...
URL: https://www.src.org/calendar/e003506/04-sessioni-welser.pdf
Modified: 2011-06-17 - 991KB
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- 19:
E003676 - Memory Forum - Strukov
- OUTL OUTL 1. HP's memristor and ap 2. Models of resistance sw 3 Volatility speed tradeo 3. Volatility speed tradeo 4. 3D circuit architecture 5. Proposal for evaluatio LINE LINE ...
URL: https://www.src.org/calendar/e003676/strukov.pdf
Modified: 2010-07-29 - 1.4MB
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- 20:
E003676 - Memory Forum - Storage Class Memory
- CMOx TM Memory Technology - Applications & Products October 2009 Memory Cell Advantages Memory Cell Advantages © 2009 Unity Semiconductor Corporation 2 The 0 5F 2 Memory Cell The ...
URL: https://www.src.org/calendar/e003676/rinerson.pdf
Modified: 2010-07-29 - 3.0MB
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- 21:
E003676 - Memory Forum - Research Priorities/Needs
- A STAR/SRC/NSF Memory Forum Singapore Panel VI: Needs and Models for Collaborative Research A-STAR/SRC/NSF Memory Forum - Singapore Research Priorities/Needs Research Priorities/...
URL: https://www.src.org/calendar/e003676/sandhu.pdf
Modified: 2010-07-29 - 651KB
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- 22:
SRC GRC: Nano-Morphic Forum - P2 - Wise
- 1 OPPORTUNITIES IN NANOMORPHIC SYSTEMS: Microsystems Based on Nanotechnology and Beyond Kensall D. Wise The University of Michigan SRC/NSF Forum on Nanomorphic Systems Stanford ...
URL: https://www.src.org/calendar/e003062/wise.pdf
Modified: 2011-08-02 - 3.1MB
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- 23:
Foundry Perspective on Embedded Memory
- Foundry Perspective on Embedded Memory Panel VI: Needs and Models for Collaborative Research Zoran Krivokapič October 21, 2009 Memory Options y p Memory can be delivered in ...
URL: https://www.src.org/calendar/e003676/krivokapic.pdf
Modified: 2010-07-29 - 278KB
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- 24:
SRC GRC: Nano-Morphic Forum - P4 Hutchby
- Jim Hutchby Semiconductor Research Corporation Stanford University, November 8 - 9, 2007 SRC/NSF Forum on Nano-Morphic Systems Emerging Research Devices for Added Functionality 2 ...
URL: https://www.src.org/calendar/e003062/hutchby.pdf
Modified: 2011-08-02 - 671KB
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- 25:
The Challenges and Opportunities of Atomic Layer Etching (Event...
- The Challenges and Opportunities of Atomic Layer Etching Date: Thursday, May 5, 2016, 2 p.m.-3 p.m. ET Location: University of Arizona, Tucson, AZ, United States Type: e-Workshop ...
URL: https://www.src.org/calendar/e005904/
Modified: 2016-11-05 - 34KB
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- 26:
E003676 - Memory Forum - Perspectives on ReEAM Technologies
- In K. Yoo Perspectives on ReRAM technologies 2009. 10. 26 1/12 Evolution patterns of products Can we forecast future products? Perspectives on ReRAM technologies A switching ...
URL: https://www.src.org/calendar/e003676/yoo.pdf
Modified: 2010-07-29 - 3.4MB
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- 27:
e003676 - Memory Forum - eDRAM to the Rescue
- IBM Systems and Technology Group - SRDC © 2008 IBM Corporation SRC eDRAM 2009 J.Barth eDRAM to the Rescue Why eDRAM 1/3 Area 1/5 Power SER 2-3 Fit/Mbit vs 2k-5k for SRAM Smaller ...
URL: https://www.src.org/calendar/e003676/barth.pdf
Modified: 2010-07-29 - 1.0MB
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- 28:
SRC GRC: Nano-Morphic Forum - P4 Meyyappan
- M. Meyyappan NASA Ames Research Center Moffett Field, CA 94035 email: m.meyyappan@nasa.gov Collaboration: Prof. David Janes, Purdue University on measurements NASA Ames ...
URL: https://www.src.org/calendar/e003062/meyyappan.pdf
Modified: 2011-08-02 - 1.4MB
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- 29:
E003676 - Memory Forum - Floating Body RAM (FBRAM): Overview...
- Floating Body RAM (FBRAM) : g y ( ) Overview and Future Challenges Takeshi Hamamoto Device Process Development Center Device Process Development Center Toshiba Corporation 1 DRAM ...
URL: https://www.src.org/calendar/e003676/hamamoto.pdf
Modified: 2010-07-29 - 234KB
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- 30:
SRC GRC: Nano-Morphic Forum - P4 Zhirnov
- "Minimizing" the Effects of Physical Limits Victor Zhirnov Semiconductor Research Corporation Stanford University, November 8 & 9, 2007 CMOS scaling on track to obtain physical ...
URL: https://www.src.org/calendar/e003062/zhirnov.pdf
Modified: 2011-08-02 - 351KB
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